RX1214B280YH

Overview

The Ampleon RX1214B280YH is a GaN HEMT RF power transistor designed for base station applications in the 2.3 to 2.7 GHz frequency range. It operates with a drain voltage of 28V and delivers an output power of 140W (51.5 dBm) at a gain of 16.5 dB and PAE of 55% under CW operation. The device utilizes a lead-free, RoHS-compliant surface-mount package suitable for high-volume manufacturing.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for enhanced thermal conductivity and power density.
• Engineered for high linearity and efficiency in wideband cellular infrastructure environments.
• Features a robust, lead-free surface-mount package optimized for automated assembly processes.

Applications

• Base station power amplification for WCDMA/HSPA networks
• Power amplification for LTE-Advanced carrier aggregation systems
• Broadband RF power amplification in macro cell sites

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific part marking matches official Ampleon documentation. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering.

Selection Notes

Select this component for designs requiring high power density in the 2.3-2.7 GHz band. Evaluate thermal management solutions to maintain junction temperature within specified limits during continuous wave operation.

Part Context

This model belongs to the Ampleon RX series of GaN transistors. These devices are engineered specifically for modern multi-standard base station architectures, replacing older LDMOS technologies to achieve superior size and weight reduction while maintaining performance standards.

Replacement Considerations

Consult Ampleon technical support for verified cross-reference data. Direct replacements may require schematic and layout modifications due to differences in pinout configuration and thermal pad design.