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The S4D10120D is a silicon carbide (SiC) Schottky diode array manufactured by SMC Diode Solutions. It features a dual configuration with one pair of common cathodes housed in a TO-247-3 package. The device supports a maximum DC reverse voltage of 1200V and an average rectified current of 5A per diode. Key electrical parameters include a forward voltage of 1.8V at 5A, a peak forward surge current of 46A, and a reverse leakage current of 150µA. It operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix against the manufacturer's official documentation to confirm exact pinout compatibility and thermal characteristics. Ensure that the TO-247-3 package dimensions match the target PCB footprint requirements. Confirm RoHS compliance status if required by the end-product regulations. Cross-reference the datasheet revision date to ensure all electrical limits are current.
Select this component for applications requiring high-voltage blocking capabilities and efficient high-frequency operation. The SiC material offers superior performance over traditional silicon in terms of switching speed and thermal management. Consider the 1200V rating for safety margins in medium-voltage systems. Evaluate the 5A per diode current capacity against the load requirements to prevent thermal overload during continuous operation.
This part belongs to the S4D series of silicon carbide power Schottky rectifiers from SMC Diode Solutions. The series is designed for high-efficiency power conversion applications where reduced switching losses are critical. The TO-247-3 package provides robust mechanical stability and effective heat dissipation for industrial-grade environments.
Public confirmed substitute part numbers: C4D10120D.