SAV-551+

SAV-551+

$1.63
  • Description:RF MOSFET E-PHEMT 3V MMM1362
  • Series:-

SKU:a64d49859bd3 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 3V MMM1362
  • Series:-
  • Mfr:Mini-Circuits
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:E-pHEMT
  • Frequency:45MHz ~ 6GHz
  • Gain:20.9dB
  • Voltage - Test:3 V
  • Current Rating (Amps):-
  • Noise Figure:1.8dB
  • Current - Test:15 mA
  • Power - Output:20dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:MMM1362
  • Configuration:-

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SAV-551+

Overview

The SAV-551+ is an ultra-low noise, medium current E-PHEMT transistor manufactured by Mini-Circuits. It operates within a frequency range of 0.045 to 6 GHz and requires external biasing and matching circuits. The device utilizes enhancement mode Pseudomorphic High Electron Mobility Transistor technology, allowing operation with a single positive supply voltage. Key electrical specifications include a typical gain of 16 dB at 2 GHz, a maximum output IP3 of +25 dBm, and a power output at 1 dB compression of +18 dBm. It draws a low current of 15 mA and features a plastic molded SOT-343 (SC-70) package.

Feature Summary

  • Ultra-low noise figure performance suitable for demanding base station applications
  • High third-order intercept point (IP3) combined with low noise characteristics
  • Operates on a single positive supply voltage using E-PHEMT technology
  • Wide bandwidth coverage from 45 MHz to 6 GHz

Applications

  • Cellular infrastructure
  • ISM band operations
  • GSM systems
  • WCDMA networks
  • WiMax and WLAN implementations

Procurement Notes

Verify the specific RoHS compliance status through official manufacturer documentation before integration. Confirm that the MMM1362 case style matches your PCB footprint requirements. Ensure external biasing components are selected to maintain the specified drain-source voltage and drain current limits. Check for any updated environmental or export classification data directly from the supplier.

Selection Notes

Select this component when designing amplifiers requiring high linearity and minimal signal degradation in the RF front end. The device is ideal for applications where low noise figure is critical below 2.5 GHz. Designers must provide their own input and output matching networks as the unit is a bare die transistor. Consider the TAMP family if integrated modules with built-in matching are preferred over discrete design.

Part Context

The SAV-551+ belongs to the SAV series of E-PHEMT transistors produced by Mini-Circuits. These devices are engineered for high-performance RF applications requiring low power consumption and high stability. The product line supports various wireless communication standards and is available in surface-mount packages for automated assembly processes.

Replacement Considerations

The datasheet identifies the Avago ATF-55143 as a potential replacement model. Suitability for substitution depends entirely on system-specific electrical criteria, stimulus conditions, and environmental stresses. Customers must verify compatibility with existing circuit designs before implementing this change.

FAQ

Does the SAV-551+ require external components for operation?

Yes, external biasing and matching circuits are required. The device does not include internal DC blocking or stabilization components.

What is the maximum operating temperature for the SAV-551+?

The maximum operating temperature is +85 °C, while the minimum operating temperature is -40 °C.

How is the gate terminal utilized in the SAV-551+ configuration?

Pin 3 serves as the Gate terminal and is used for the RF input signal.

SAV-551+SAV-551+
$1.63
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