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Product Detailed Parameters
- Description：PCH+PCH 1.8V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SCH2308-TL-E is a matched pair P-channel silicon MOSFET manufactured by onsemi. It features a depletion mode operation with a drain-to-source voltage rating of -30V and a continuous drain current of -200mA. The device supports low-voltage drive at 1.5V and exhibits low ON-resistance, making it suitable for compact switching applications. It is housed in an LLCC surface-mount package and operates within a channel temperature range up to 150°C.
Feature Summary
- Matched pair configuration containing two P-channel MOSFETs in a single package for high-density mounting
- Depletion mode operation optimized for specific switching requirements
- Capable of driving loads with a low gate voltage of 1.5V
Applications
- General-purpose switching devices requiring matched pairs
- Low-voltage drive circuits utilizing 1.5V logic levels
- High-density electronic assemblies needing compact dual-transistor solutions
Procurement Notes
Verify the exact ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the depletion mode characteristic aligns with circuit design requirements, as this differs from standard enhancement mode devices. Cross-reference the LLCC package dimensions with PCB layout guidelines to ensure proper footprint compatibility during procurement.
Selection Notes
Select this component when a matched P-channel pair is required for balanced performance in switching applications. The depletion mode characteristic necessitates careful biasing considerations compared to enhancement modes. Ensure the 200mA current limit and 30V voltage rating exceed the maximum operational stresses of the target application to maintain reliability under varying thermal conditions.
Part Context
This part belongs to the onsemi discrete semiconductor portfolio, specifically within the MOSFET category. It represents a specialized solution combining two transistors for applications demanding symmetry or differential switching capabilities. The device utilizes silicon technology and is designed for surface-mount assembly, supporting modern automated manufacturing processes.
Replacement Considerations
Direct substitutes must match the P-channel depletion mode characteristic and LLCC package. Verify that alternative components provide equivalent matched pair parameters and 1.5V drive capability. Generic P-channel MOSFETs without matching characteristics are not suitable replacements.
