ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PCH+SBD 1.8V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The SCH2830-S-TL-E is a P-Channel Power MOSFET manufactured by onsemi. It features a drain-source voltage rating of 30V and a continuous drain current capability of 15A. The device utilizes the Super Junction technology to achieve low on-resistance, specifically 8.0mΩ at a gate-source voltage of 10V. It is housed in a TO-263 package, designed for surface-mount applications requiring high efficiency and robust switching performance.
Feature Summary
- Utilizes Super Junction technology for optimized switching characteristics
- Provides low on-resistance to minimize conduction losses
- Engineered for high-efficiency power switching applications
Applications
- DC-DC converters
- Power management circuits
- General-purpose switching applications
Procurement Notes
Verify the specific suffix 'S' against the official datasheet to confirm pinout and electrical tolerances. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Confirm RoHS compliance status with the manufacturer before finalizing procurement specifications.
Selection Notes
Select this component when a 30V P-Channel MOSFET with 15A current capacity is required. The low on-resistance makes it suitable for applications prioritizing thermal efficiency. Verify that the TO-263 package dimensions align with the design constraints and that the gate drive voltage supports the specified Rds(on) performance.
Part Context
This component belongs to the Super Junction MOSFET family from onsemi, which integrates advanced semiconductor structures to reduce resistance without increasing die size. This series targets high-performance power conversion systems where efficiency and thermal management are critical design parameters.
Replacement Considerations
Check for direct substitutes within the same Super Junction family or equivalent 30V P-Channel devices from other manufacturers. Ensure replacement parts match the TO-263 package and meet or exceed the 15A current and 8.0mΩ resistance specifications.
