SCTWA20N120

Single FETs, MOSFETs Overview

The SCTWA20N120 is a silicon carbide (SiC) power MOSFET manufactured by STMicroelectronics, designed for high-efficiency and high-power density applications. It features an N-channel enhancement mode configuration housed in a HiP247 long leads package. The device supports a drain-source voltage of 1200 V and a continuous drain current of 20 A at 25 °C case temperature. Typical on-resistance is 169 mΩ at 25 °C and 189 mΩ at 150 °C junction temperature. It operates with a maximum junction temperature of 200 °C and includes a robust intrinsic body diode.

Single FETs, MOSFETs Feature Summary

• Very tight variation of on-resistance versus temperature
• Slight variation of switching losses versus temperature
• Very fast and robust intrinsic body diode
• Low capacitance

Single FETs, MOSFETs Applications

• Solar inverters
• UPS systems
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code SCTWA20N120 against the latest official datasheet to confirm availability status and packaging details. Ensure that the HiP247 long leads package dimensions align with your PCB footprint requirements. Confirm compliance with ECOPACK standards if environmental specifications are mandatory for your project.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high thermal stability and low switching losses across a wide temperature range. The HiP247 long leads package facilitates through-hole mounting, which may be preferred for mechanical robustness or specific manufacturing processes. Evaluate the 200 °C junction temperature capability against your system's thermal management strategy.

Single FETs, MOSFETs Part Context

This part belongs to the SiC MOSFET series from STMicroelectronics, utilizing wide bandgap material properties for superior performance compared to traditional silicon devices. The SCTWA20N120 variant specifically utilizes extended leads within the HiP247 outline to accommodate different assembly needs while maintaining industry-standard thermal characteristics.

Single FETs, MOSFETs Replacement Considerations

Check for updated product revisions or alternative packages such as standard HiP247 if long leads are not required. Verify compatibility with existing gate drive voltages and thermal resistance parameters before substituting.