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The SD199E6327 is a silicon variable capacitance diode manufactured by Infineon Technologies in an SOD-323 package. It features a maximum reverse voltage of 30 V and a peak reverse voltage of 35 V. The device supports a forward current of 20 mA and operates within a temperature range of -55°C to 150°C. Electrical characteristics include a typical capacitance ratio of 22.6 at 1 MHz, with capacitance values ranging from approximately 62 pF at 1 V to 2.8 pF at 28 V. The series resistance is typically 1.15 Ω at 470 MHz.
Verify the component status before procurement as datasheets may indicate end-of-life or obsolescence phases. Confirm RoHS compliance and Pb-free packaging requirements against specific project needs. Ensure the ordering suffix matches the required tape and reel specifications for automated assembly processes.
Select this component when high capacitance ratios are required for tuning circuits. Verify that the operating frequency aligns with the specified AC characteristics. Consider the thermal management capabilities given the wide operating temperature range and ensure the package size fits the PCB layout constraints.
This part belongs to the SD199 family of silicon variable capacitance diodes. It is specifically engineered for RF tuning applications requiring stable performance across varying temperatures. The SOD-323 package offers a compact footprint suitable for modern surface-mount technology assemblies.
Consult official replacement lists for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before considering alternative components.
The maximum DC reverse voltage (VR) is 30 V, with a peak reverse voltage (VRM) of 35 V.
The typical capacitance ratio (CT1/CT28) is 22.6 at 1 MHz.
Yes, the SD199E6327 is qualified according to AEC-Q101 standards.