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Product Detailed Parameters
- Description：RF TRANS NPN 16V M113
- Series：-
- Mfr：STMicroelectronics
- Package：Box
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：16V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：10dB
- Power - Max：70W
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 250mA, 5V
- Current - Collector (Ic) (Max)：8A
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：M113
- Supplier Device Package：M113
- Grade：-
- Qualification：-
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Overview
The SD1274-01 is a VHF mobile application RF power bipolar transistor manufactured by STMicroelectronics. It is a 13.6 V Class C epitaxial silicon NPN planar device designed for high-power output in communications systems. The component operates at a frequency of 160 MHz, delivering a minimum output power (POUT) of 30 W with 10 dB gain when driven by a 3.0 W input signal at a collector-emitter voltage of 13.6 V. Key electrical specifications include a collector-base voltage (VCBO) of 36 V, a collector-emitter voltage (VCEO) of 16 V, and a maximum junction temperature of +200 °C. The device features an emitter ballasted die geometry to withstand severe load mismatch conditions.
Feature Summary
- Utilizes an emitter ballasted die geometry to ensure robustness against severe load mismatch conditions.
- Designed specifically for VHF mobile communication applications requiring high power output.
- Features a common emitter configuration optimized for Class C operation.
Applications
- VHF mobile radio transmitters
- High-power VHF communication base stations
- RF power amplification stages in broadcast equipment
Procurement Notes
Verify the specific ordering code and marking requirements before procurement. Confirm that the M113 plastic tray packaging aligns with your assembly line handling capabilities. Ensure thermal management solutions are compatible with the specified junction-to-case thermal resistance of 1.2 °C/W to maintain safe operating temperatures during high-power operation.
Selection Notes
Select this component for designs requiring high efficiency and power density in the VHF band. Consider the 16 V collector-emitter voltage rating and 8.0 A device current limits when designing biasing networks. Evaluate the impedance data provided for 175 MHz if operating near the upper end of the frequency range to ensure proper matching network design.
Part Context
This part belongs to the family of RF power bipolar transistors from STMicroelectronics. It is distinct from MOSFET-based RF devices due to its planar silicon NPN construction. The M113 package variant provides a standardized mechanical footprint suitable for screw-mount or board-mount implementations in rugged environments.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation. Verify pin compatibility and thermal characteristics if considering alternative manufacturers' components for direct replacement.
FAQ
What is the typical output power at 160 MHz?
The typical output power is 30 W minimum when driven by a 3.0 W input signal at a collector-emitter voltage of 13.6 V.
How does the device handle load mismatches?
The SD1274-01 utilizes an emitter ballasted die geometry, which allows it to withstand severe load mismatch conditions without damage.
What is the maximum junction temperature?
The maximum junction temperature (TJ) is rated at +200 °C.
