SD1332-05H

SD1332-05H

  • Description:RF TRANS NPN 15V 5.5GHZ M150
  • Series:-

SKU:93fd3db28db0 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 15V 5.5GHZ M150
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:5.5GHz
  • Noise Figure (dB Typ @ f):2.5dB @ 1GHz
  • Gain:17dB
  • Power - Max:180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 14mA, 10V
  • Current - Collector (Ic) (Max):30A
  • Operating Temperature:200°C
  • Mounting Type:Surface Mount
  • Package / Case:M150
  • Supplier Device Package:M150
  • Grade:-
  • Qualification:-

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SD1332-05H

Overview

The SD1332-05H is a bipolar NPN radio-frequency power transistor manufactured by Microsemi Corporation. It is designed for high-frequency applications, operating up to 5.5 GHz with a collector-emitter voltage rating of 15V. The component utilizes the M150 surface-mount package, facilitating integration into compact RF circuit designs. As an original electronic component, it supports lead-free and RoHS-compliant manufacturing standards, ensuring environmental safety while maintaining performance in RF power amplification tasks.

Feature Summary

  • Bipolar NPN architecture optimized for radio-frequency power amplification
  • Surface-mount M150 package design for compact PCB integration
  • RoHS compliant and lead-free construction for environmental standards

Applications

  • RF power amplifier stages
  • High-frequency signal processing circuits
  • Wireless communication transmitters

Procurement Notes

Verify the manufacturer origin carefully, as some listings incorrectly attribute this part to Unisonic Technology Corporation despite Microsemi being the primary identifier. Confirm the M150 package type matches your board layout requirements. Ensure the component is specified as an original Microsemi product to avoid counterfeit risks associated with mixed sourcing data found in distributor inventories.

Selection Notes

Select this component when a 15V NPN bipolar transistor is required for RF applications up to 5.5 GHz. The M150 surface-mount form factor is critical for space-constrained designs. Consider the specific biasing requirements for common source configurations if referenced in detailed schematics, though official datasheet specifics are limited in public sources.

Part Context

This device belongs to the Microsemi Discrete Product Group portfolio of RF power transistors. It is categorized under Bipolar (BJT) RF components, distinct from MOSFET or GaN technologies. The part number structure aligns with Microsemi's historical naming conventions for silicon-based RF power devices used in telecommunications infrastructure.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with similar Microsemi models like SD1372-01H may provide functional similarities but requires separate verification of electrical parameters.

SD1332-05HSD1332-05H

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