SD1726

Overview

The SD1726 is a 50 V epitaxial silicon NPN planar RF transistor designed primarily for SSB communications. It utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The device operates at 30 MHz with a collector-emitter voltage of 55 V and a maximum drain current of 20 A. At 50 V and 100 mA quiescent current, it delivers a minimum output power of 150 W PEP with 14 dB gain. Key electrical parameters include a collector-base breakdown voltage of 110 V, a DC current gain (hFE) of 18 to 43.5, and a junction-to-case thermal resistance of 0.75 °C/W.

Feature Summary

• Optimized specifically for Single Sideband (SSB) applications
• Features emitter ballasting for enhanced ruggedness
• Utilizes gold metallization technology

Applications

• HF SSB communications equipment
• RF power amplification stages

Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the M174 package type matches the mechanical constraints of the target design. Ensure sourcing channels provide authentic STMicroelectronics products to avoid counterfeit risks associated with discontinued parts.

Selection Notes

Select this component for high-power HF SSB transmitter designs requiring robust performance. Consider the 55 V collector-emitter rating and 30 MHz operating frequency. Evaluate the thermal management requirements based on the 0.75 °C/W junction-to-case resistance for proper heat sinking.

Part Context

This part belongs to the STMicroelectronics RF & Microwave Transistors category. It is an NPN planar device intended for radio frequency power applications. The specific branding code for this component is THA15.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.