SD1727

Overview

The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. It operates at 30 MHz and delivers a minimum output power of 150 W PEP with 14 dB gain. The device features IMD performance of -30 dB and utilizes emitter ballasting for extreme ruggedness under severe operating conditions.

Feature Summary

• Optimized specifically for Single Sideband (SSB) applications
• Utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions
• Features gold metallization

Applications

• HF SSB communications

Procurement Notes

Verify the manufacturer source carefully, as multiple vendors including Diodes Incorporated and Advanced Semiconductor also list this part number. Confirm that the specific unit received matches the STMicroelectronics specification sheet regarding the 50V rating, 150W PEP output, and 30MHz frequency operation before integration into sensitive RF circuits.

Selection Notes

Select this component when designing HF transmitters requiring high linearity and ruggedness. The 14 dB gain and -30 dB IMD characteristics make it suitable for linear amplification stages where signal fidelity is critical. Ensure the circuit design supports the 50V collector-emitter breakdown voltage and thermal management for 150W peak envelope power.

Part Context

This device belongs to the family of RF & Microwave Transistors intended for High Frequency applications. It is an NPN planar transistor utilizing epitaxial silicon technology. The product documentation indicates a release date of June 8, 2004, positioning it within STMicroelectronics' historical portfolio of RF power devices for amateur radio and professional communication equipment.

Replacement Considerations

Public confirmed substitute part numbers include SD1407, SD1411, SD1487, and SD1730 from STMicroelectronics.