SD1728

$99.60

Description：RF TRANS NPN 55V M177
Series：-

SKU:783dab4b2e47 Category: Bipolar RF Transistors Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 55V M177
Series：-
Mfr：STMicroelectronics
Package：Box
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：55V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：15dB ~ 17dB
Power - Max：330W
DC Current Gain (hFE) (Min) @ Ic, Vce：23 @ 10A, 6V
Current - Collector (Ic) (Max)：40A
Operating Temperature：200°C (TJ)
Mounting Type：Surface Mount
Package / Case：M177
Supplier Device Package：M177
Grade：-
Qualification：-

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SD1728

Overview

The SD1728 is a 50V epitaxial silicon NPN planar transistor designed for SSB and industrial HF applications. It utilizes emitter ballasting to improve ruggedness and reliability. The device operates at 13.56 MHz with a collector-emitter voltage of 55 V, a collector-base voltage of 110 V, and an emitter-base voltage of 4.0 V. Maximum ratings include a continuous device current of 40 A and power dissipation of 330 W. At VCC = 44 V and f = 13.56 MHz, it delivers up to 250 W output power with 15 dB gain. Static characteristics show a minimum hFE of 23 at IC = 10 A. The component is housed in the M177 package.

Feature Summary

Designed primarily for Single Sideband (SSB) and industrial high-frequency applications
Utilizes emitter ballasting to enhance operational ruggedness and reliability
Features gold metallization for improved performance stability

Applications

Single Sideband (SSB) communications
Industrial HF applications

Procurement Notes

Verify the specific ordering suffix against official STMicroelectronics documentation before procurement. Confirm that the requested variant matches the required electrical parameters and package marking. Check for any recent product change notifications or end-of-life status updates directly from the manufacturer. Ensure compliance with environmental standards such as ECOPACK specifications if applicable to your supply chain requirements.

Selection Notes

Select this component when designing circuits requiring high-power RF amplification at 13.56 MHz. Consider the thermal resistance of 0.4 °C/W and the need for adequate heat sinking given the 330 W power dissipation rating. Evaluate the static gain range and ensure the biasing network supports the specified operating conditions for optimal linearity and efficiency in Class C operation.

Part Context

The SD1728 belongs to STMicroelectronics' RF & Microwave transistor portfolio, specifically targeting high-frequency applications. It is part of a series of devices optimized for robust performance in demanding RF environments. The M177 package provides a standardized form factor for mounting on heatsinks, facilitating integration into larger RF power amplifier modules used in broadcast and industrial systems.