SD2903

Overview

The SD2903 is a gold metallized N-Channel MOS field-effect RF power transistor manufactured by STMicroelectronics. It is designed for large signal applications operating at 28 V DC. The device supports frequencies up to 400 MHz and provides a gain of 15 dB. With a forward transconductance minimum of 0.6 S and power dissipation capability of 100 W, it serves as a robust solution for high-frequency RF circuits.

Feature Summary

• Gold metallized N-Channel MOS construction
• Optimized for large signal 28 V DC applications
• High frequency operation up to 400 MHz

Applications

• RF power amplification in HF/VHF/UHF bands
• Large signal transmitter stages
• High frequency communication systems

Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm package integrity and pin configuration against original specifications. Request detailed test reports if available. Ensure storage conditions meet semiconductor requirements to prevent degradation before installation.

Selection Notes

Select this component for applications requiring high power dissipation and specific frequency ranges. Evaluate thermal management needs given the 100 W rating. Consider availability constraints as the part may be discontinued. Compare performance metrics with current alternatives if long-term supply stability is critical.

Part Context

This RF power transistor belongs to STMicroelectronics' discrete semiconductor portfolio. It complements other RF components in amplifier designs. The gold metallization enhances reliability and conductivity compared to standard aluminum packages. It fits within the broader category of high-frequency power devices used in professional communications.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material. Consult manufacturer documentation for direct replacements or evaluate equivalent RF power transistors with matching frequency and power ratings.