SD2904

Overview

The SD2904 is a gold metallized N-channel MOS field-effect RF power transistor designed for large signal applications up to 500 MHz. It operates at a maximum drain-source voltage of 28 V and delivers a minimum output power of 30 W with a gain of 9.5 dB at 400 MHz. The device supports Class A or AB operation and features excellent thermal stability. Key electrical specifications include a breakdown voltage of 65 V, a junction temperature rating of 200 °C, and a junction-to-case thermal resistance of 1.75 °C/W.

Feature Summary

• Gold metallization for enhanced reliability
• Common source configuration
• Excellent thermal stability

Applications

• HF/VHF/UHF RF power amplification
• Large signal applications up to 500 MHz
• Class A or AB operation circuits

Procurement Notes

Verify the component datasheet against the manufacturer's official documentation to confirm current production status and specific lot markings. Ensure that the ordering code branding matches the required identification for inventory tracking. Confirm compliance with any applicable environmental standards before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-frequency performance up to 500 MHz with significant output power capabilities. Consider the 28 V DC operating limit and the need for appropriate heatsinking due to the specified thermal resistance values. Evaluate the impedance data provided for the target frequency to ensure proper matching network design.

Part Context

This part belongs to the STMicroelectronics RF Power Transistors category, specifically HF/VHF/UHF N-Channel MOSFETs. It is engineered for robust performance in radio frequency environments where thermal management and signal integrity are critical. The gold metallization distinguishes it within the family for improved durability.

Replacement Considerations

No public confirmed substitute part numbers are available in the verified documentation.