SD2918

Overview

The SD2918 is an n-channel MOS field-effect RF power transistor manufactured by STMicroelectronics. It is designed for 50 V DC large-signal applications operating up to 200 MHz. The device features gold metallization and a common source configuration, ensuring excellent thermal stability. Key performance metrics include a minimum output power (P_OUT) of 30 W with an associated gain of 18 dB at 30 MHz.

Feature Summary

• Gold metallization construction
• Common source configuration
• Excellent thermal stability

Applications

• 50 V DC large signal applications
• RF power amplification up to 200 MHz

Procurement Notes

Verify the obsolete status of the SD2918 before initiating any procurement activities. Confirm availability through authorized distributors or secondary market channels, as standard production supply may be discontinued. Ensure that any replacement components meet the original electrical specifications and package requirements for your specific design.

Selection Notes

Select this component only if the application requires an n-channel MOS RF power transistor capable of handling 50 V DC bias. Verify that the required frequency range does not exceed 200 MHz and that the power output needs align with the 30 W minimum specification at 30 MHz. Consider thermal management solutions due to the high-power nature of the device.

Part Context

The SD2918 belongs to the family of HF/VHF DMOS transistors from STMicroelectronics. These devices are engineered for robust RF performance in demanding environments. The use of gold metallization contributes to reliability and solderability, while the common source topology simplifies circuit integration for high-frequency power amplification tasks.

Replacement Considerations

As the SD2918 is marked obsolete, evaluate alternative RF power transistors from the same manufacturer or other suppliers. Ensure substitutes offer comparable P_OUT, gain, and voltage ratings. Verify pin compatibility and thermal characteristics to facilitate a seamless transition without redesigning the entire amplifier stage.