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The SD2932 is a gold metallized N-channel MOS field-effect RF power transistor designed for large signal applications up to 250 MHz. It operates with a 50 V DC supply and delivers a minimum output power of 300 W with 15 dB gain at 175 MHz. The device features excellent thermal stability and is configured for common source push-pull operation.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type, marking details, and shipping specifications. Ensure compatibility with existing thermal management designs due to the device's high power dissipation requirements.
Select this component for RF power stages requiring high output capability in the HF through UHF bands. Confirm that the system design supports the necessary 50 V DC bias and that the layout accommodates the specific package footprint and thermal needs for push-pull configurations.
This part belongs to STMicroelectronics' portfolio of RF power transistors intended for robust performance in demanding radio frequency environments. It serves as a solution for applications where high power density and thermal reliability are critical operational factors.
Consult official substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics.