SD2932B

Overview

The SD2932B is an N-channel MOS field-effect RF power transistor manufactured by STMicroelectronics. It features gold metallization and is designed for large signal applications with a 50 V DC supply up to 250 MHz. The device provides a minimum output power of 300 W with 15 dB gain at 175 MHz. It exhibits excellent thermal stability and supports common source push-pull configurations, making it suitable for HF/VHF/UHF radio frequency power amplification.

Feature Summary

• Gold metallization for enhanced performance
• Excellent thermal stability characteristics
• Supports common source push-pull configuration

Applications

• HF/VHF/UHF RF power amplification
• Large signal applications up to 250 MHz
• Radio frequency transmitter stages

Procurement Notes

Verify the specific suffix 'B' against the official STMicroelectronics datasheet to confirm pinout and electrical tolerances differ from the base SD2932 model. Ensure RoHS compliance status matches current manufacturing standards. Confirm package type and lead finish specifications directly with the authorized distributor or manufacturer before finalizing procurement orders.

Selection Notes

Select this component for high-power RF applications requiring 300 W output at 175 MHz. Ensure the design accommodates the 50 V DC operating voltage and utilizes a common source push-pull topology. Verify thermal management requirements align with the device's gold metallized construction and heat dissipation capabilities for continuous wave operation.

Part Context

The SD2932B belongs to the SD2932 series of RF power transistors. This family includes variants like the SD2942, which offers higher saturation power. The series is characterized by gold metallization and suitability for 50 V DC large signal applications in the HF/VHF/UHF spectrum, providing reliable performance for professional radio frequency equipment.

Replacement Considerations

The SD2942 is a confirmed substitute offering 350 W output power and lower R DS(on). Evaluate if the increased power capability and improved efficiency justify any potential changes in circuit impedance matching or thermal design when transitioning from the SD2932B.