SD2932BW

Overview

The SD2932BW is an N-channel gold-metallized RF power MOSFET from STMicroelectronics, designed for large-signal applications up to 250 MHz. It delivers a minimum output power of 300 W with 15 dB gain at 175 MHz. The device features excellent thermal stability and supports common source push-pull configurations. It operates on a 50 V DC supply and utilizes a surface-mount M244 package.

Feature Summary

• Gold metallization for enhanced reliability
• Excellent thermal stability characteristics
• Optimized for common source push-pull operation

Applications

• HF/VHF/UHF RF power amplification
• Large signal applications up to 250 MHz
• High power transmitter stages

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS3 compliance status directly with the manufacturer or authorized distributors before procurement. Ensure the ordering code matches the required M244 surface-mount variant.

Selection Notes

Select this component for designs requiring high output power in HF through UHF bands. Verify that the system can support the necessary 50 V DC bias voltage. Ensure thermal management solutions accommodate the power dissipation associated with 300 W output levels. Check compatibility with push-pull circuit topologies.

Part Context

This part belongs to the SD2932 series of RF power transistors. It shares core electrical characteristics with variants like the SD2932W but differs in packaging. The series is established for robust performance in high-frequency power amplification tasks within broadcast and communication infrastructure.

Replacement Considerations

The SD2942 offers higher saturation power (350 W) and lower R DS(on). Evaluate if the increased power capability justifies potential design changes. No direct pin-compatible substitutes are confirmed in public data.