SD2933W

Overview

The SD2933W is a gold metalized N-channel MOS field-effect RF power transistor designed for large signal applications up to 150 MHz. It delivers a minimum output power of 300 W with 20 dB gain at 30 MHz. The device operates on a 50 V DC supply and features a thermally enhanced M174 package to ensure low junction temperatures. This construction provides excellent thermal stability and ruggedness, making it suitable for demanding industrial environments.

Feature Summary

• Gold metallization for superior thermal conductivity
• Thermally enhanced packaging design
• Common source configuration

Applications

• Industrial, Scientific, and Medical (ISM) equipment
• High-power RF amplification stages
• Broadband communication systems

Procurement Notes

Verify the specific suffix 'W' against the manufacturer's official documentation to confirm the exact packing specification. Ensure that the ordering information matches the required bulk or tray format as defined in the latest datasheet revision. Confirm RoHS compliance status directly from the product declaration before finalizing procurement orders.

Selection Notes

Select this component when an application requires high power capability combined with robust thermal performance. The device is appropriate for designs needing reliable operation under large signal conditions. Verify that the system can accommodate the 50 V DC operating voltage and that the thermal management solution aligns with the package's heat dissipation characteristics.

Part Context

This part belongs to the SD2933 series of HF/VHF/UHF RF power N-channel MOSFETs manufactured by STMicroelectronics. The series is characterized by its use in high-reliability applications where thermal stability is critical. The SD2933W represents a specific variant within this active product line focused on ISM band operations.

Replacement Considerations

The SD2943W is a documented alternative offering higher saturation power capabilities. Evaluate if the increased power handling meets the design requirements while ensuring compatibility with existing thermal and electrical constraints.