SD56060

Overview

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. Operating in common source mode at 28 V, it delivers high gain and broadband performance. Key electrical ratings include a drain-source voltage of 65 V, a maximum junction temperature of 200 °C, and total power dissipation of 148 W at 70 °C case temperature. At 860 MHz with 28 V supply and 100 mA quiescent current, the device provides 60 W output power, 16 dB typical power gain, and 60% drain efficiency.

Feature Summary

• Excellent thermal stability
• Common source configuration push-pull
• BeO-free package

Applications

• Ground/air communication
• ISM (Industrial, Scientific, and Medical)

Procurement Notes

Verify the specific revision level against the latest STMicroelectronics datasheet DS11102 Rev 2 before procurement. Confirm that the M246 package variant matches the required mechanical footprint and pinout configuration for the target application design.

Selection Notes

Select this component for designs requiring high linearity and broadband performance up to 1 GHz. Ensure the thermal management system can handle the specified junction-to-case thermal resistance of 0.875 °C/W to maintain operation within the 200 °C maximum junction temperature limit under full load conditions.

Part Context

This LDMOS transistor belongs to STMicroelectronics' portfolio of RF power transistors optimized for commercial and industrial use. It utilizes an enhanced process layout to improve ruggedness and reliability compared to standard MOSFETs, supporting applications from 1 MHz to 4 GHz with various package options including ceramic and air cavity types.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.