SD56150

Overview

The SD56150 is an RF LDMOS FET designed for wide-band communication and ISM applications. It operates at a drain voltage of 32V with a maximum current of 500mA. The device supports frequencies up to 860MHz, providing a gain of 16.5dB. It delivers 150W of output power in the M252 package. Electrical specifications are measured at a case temperature of 25°C.

Feature Summary

• Designed for wide-band communication and ISM applications
• High output power capability of 150W
• Operates at 32V drain voltage

Applications

• Wide-band communication systems
• ISM band applications
• RF power amplification

Procurement Notes

Verify the specific datasheet version and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the M252 package dimensions and thermal requirements align with your design constraints. Ensure compliance with RoHS standards as indicated in public records. Cross-reference part numbers to avoid confusion with similar RF components.

Selection Notes

Select this component when high power output at lower RF frequencies is required. Consider the 32V operating limit and thermal management needs for the M252 package. Evaluate the 16.5dB gain against system requirements. Verify compatibility with wide-band communication protocols and ISM band regulations.

Part Context

This component belongs to STMicroelectronics' RF FETs and MOSFETs category. It is specifically engineered for radio frequency power applications. The M252 package provides a robust solution for high-power RF designs. It serves as a key element in transmitter stages for communication equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Consult official distributor catalogs or manufacturer cross-reference guides for compatible alternatives. Ensure any replacement matches the 32V rating, 150W power output, and M252 package form factor.