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The SD57030 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor from the LdmoST family, designed for broadband commercial and industrial applications up to 1.0 GHz. It delivers 30 W output power with 13 dB gain at 945 MHz when operating in common source mode at 28 V. Key electrical parameters include a continuous drain current of 4 A, a drain-source breakdown voltage of 65 V, and a gate-source voltage limit of +20 V. The device operates within a temperature range of -65 °C to +150 °C, features a PowerSO-10RF-Straight-4 package, and has a power dissipation rating of 52.8 W.
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm RoHS compliance status and specific ordering suffixes against official datasheets prior to procurement. Ensure storage conditions account for moisture sensitivity levels defined in the manufacturer documentation to prevent damage during handling and assembly processes.
Select this component for designs requiring high gain and broadband performance at frequencies up to 1.0 GHz. The internal input matching reduces external component count. Verify that the 28 V operating voltage and 30 W output power align with system requirements. Consider the PowerSO-10RF package for surface mount integration and ensure thermal management solutions support the specified junction temperature limits.
The SD57030 belongs to the LdmoST family of lateral DMOS transistors from STMicroelectronics. This series targets RF power amplification needs where linearity and gain are critical. It serves as a specialized solution for base station infrastructure and other high-frequency applications demanding robust performance within a compact surface-mount footprint.
Consult official substitution guides for compatible alternatives within the LdmoST family. Verify pinout compatibility and electrical parameter equivalence before replacing existing components in established designs.