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The SD57045-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. Operating in common source mode at 28 V, it delivers 45 W output power with 13 dB gain at 945 MHz. Key electrical parameters include a continuous drain current of 5 A, a drain-source breakdown voltage of 65 V, and a gate-source voltage limit of +20 V. The device features a minimum forward transconductance of 2.7 S and a power dissipation rating of 93 W. It operates within a temperature range of -65 C to +150 C and utilizes an M250 surface-mount package.
Verify the specific ordering suffix and manufacturing date code against the latest STMicroelectronics datasheet before procurement. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the M250 package variant matches the design requirements for surface-mount assembly processes.
Select this component for designs requiring an N-Channel LDMOS transistor capable of 45 W output at 28 V bias. Ensure the application supports common source topology and operates within the 1 GHz frequency limit. Verify that the PCB layout accommodates the M250 package dimensions and thermal management needs for 93 W dissipation.
The SD57045-01 belongs to the SD57045 family of RF power transistors from STMicroelectronics. This series focuses on lateral DMOS technology optimized for broadband RF power amplification. The part shares core architectural similarities with other members of the family but is distinguished by its specific pinout and packaging configuration suitable for surface-mount integration.
Consult official substitution guides for compatible LDMOS devices. Verify pin compatibility and thermal characteristics when considering alternatives.