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The SD57060-01 is an N-channel enhancement-mode lateral Field-Effect RF power transistor manufactured by STMicroelectronics. It utilizes LDMOS technology and operates in a common source configuration at a rated voltage of 28V. The device delivers an output power of 60W with a gain of 13dB to 15dB at a frequency of 945MHz, supporting broadband applications up to 1.0GHz. It features excellent thermal stability and is housed in an M250 flangeless package. The component has a maximum rated voltage of 65V and is RoHS compliant.
Verify the obsolete status of this component before integration into new designs. Confirm availability through authorized distributors or secondary markets. Ensure compatibility with existing M250 footprint requirements. Check for updated replacement recommendations from STMicroelectronics. Validate RoHS compliance documentation for regulatory adherence.
Select this component for designs requiring 60W output power at 28V operation within the HF to 1GHz spectrum. Consider the M250 flangeless package constraints for thermal management and PCB layout. Evaluate the 13dB to 15dB gain specifications against system requirements. Assess the common source configuration suitability for the intended amplifier topology.
This part belongs to the SD57060 series of RF power transistors. It represents a specific variant optimized for 60W output power applications. The series targets broadband RF amplification needs in commercial and industrial sectors. STMicroelectronics developed this family for high-performance linear amplification tasks.
Public confirmed substitute part numbers are not available in the provided documentation. Consult STMicroelectronics technical support for current equivalent components suitable for the SD57060-01 application.