SD57060

Overview

The SD57060 is an N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. Operating in common source mode at 28 V, it delivers a typical output power of 60 W with 13 dB gain at 945 MHz. The device features excellent thermal stability and high linearity, making it suitable for base station applications. It utilizes a flangeless M250 package compliant with the 2002/95/EC European directive and is BeO free.

Feature Summary

• Common source configuration optimized for high gain and broadband performance
• Excellent thermal stability for reliable operation
• High linearity characteristics ideal for base station requirements

Applications

• Broadband commercial applications
• Industrial applications
• Base station systems requiring high linearity

Procurement Notes

Verify component status as the SD57060-01 variant is marked obsolete. Confirm availability through authorized distributors or secondary markets if active sourcing is required. Ensure compliance with RoHS standards and check for specific package revisions before procurement.

Selection Notes

Select this component for designs operating up to 1.0 GHz requiring 60 W output power. Ensure the circuit supports 28 V common source biasing. Verify thermal management capabilities match the flangeless M250 package constraints. Consider linearity requirements for base station compatibility.

Part Context

Part of the LDMOST family from STMicroelectronics, specifically the SD57060 series. Designed alongside variants like SD57030 for different power levels within the same frequency range. Utilizes lateral DMOS technology for RF power amplification.

Replacement Considerations

SD57060-01 is the specific variant documented with identical electrical specifications but noted as obsolete. No direct active substitutes are confirmed in public documentation.