SGB02N120ATMA1

$2.00

Description：IGBT NPT 1200V 6.2A TO263-3-2
Series：-

SKU:07f3881b01c1 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 6.2A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：6.2 A
Current - Collector Pulsed (Icm)：9.6 A
Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 2A
Power - Max：62 W
Switching Energy：220µJ
Input Type：Standard
Gate Charge：11 nC
Td (on/off) @ 25°C：23ns/260ns
Test Condition：800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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SGB02N120ATMA1

Overview

The SGB02N120ATMA1 is a fast NPT-technology IGBT in PG-TO-263-3-2 packaging. It features a collector-emitter voltage of 1200 V and a DC collector current of 6.2 A at 25°C. The device has a maximum power dissipation of 62 W, an operating junction temperature range of -55 to +150°C, and a short circuit withstand time of 10 µs.

Feature Summary

Utilizes NPT technology for tight parameter distribution and parallel switching capability
Features reduced turn-off energy compared to previous generations
Includes 10 µs short circuit withstand time for enhanced ruggedness

Applications

Motor controls
Inverters
Switching mode power supplies (SMPS)

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging requirements. Ensure compatibility with PG-TO-263-3-2 mounting standards and validate thermal management solutions for the specified power dissipation limits.

Selection Notes

Select this component for high-voltage applications requiring robust short-circuit protection and stable behavior across wide temperature ranges. Consider the NPT technology benefits for designs needing precise parameter control and reliable parallel operation in industrial power electronics.

Part Context

This part belongs to Infineon's portfolio of fast IGBTs utilizing Non-Punch-Through (NPT) technology. It is designed for high-efficiency power conversion systems where reliability and controlled switching characteristics are critical for system performance and longevity.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Do not assume functional equivalence based solely on voltage or current ratings without verifying package dimensions and electrical parameters.