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Product Detailed Parameters
- Description：IGBT NPT 1200V 30A TO263-3-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 15A
- Power - Max：198 W
- Switching Energy：1.9mJ
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：18ns/580ns
- Test Condition：800V, 15A, 33Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-2
- Grade：-
- Qualification：-
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Overview
The SGB15N120ATMA1 is a fast NPT-technology IGBT in PG-TO-263-3-2 packaging. It features a collector-emitter voltage of 1200 V and a DC collector current of 30 A at 25°C, dropping to 15 A at 100°C. The device has a maximum power dissipation of 198 W and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a short-circuit withstand time of 10 µs, an avalanche energy rating of 85 mJ, and a turn-off energy (Eoff) of 1.5 mJ at Tj=25°C.
Feature Summary
- Utilizes NPT technology for tight parameter distribution and high ruggedness
- Offers 40% lower turn-off energy compared to previous generations
- Supports parallel switching capability with temperature stable behavior
- Provides 10 µs short circuit withstand time
Applications
- Motor controls
- Inverters
- Switching mode power supplies (SMPS)
Procurement Notes
Verify the component matches the exact Infineon part number SGB15N120ATMA1. Confirm the package type is PG-TO-263-3-2. Ensure the datasheet revision aligns with Rev 2_2 Apr 07 specifications. Check RoHS compliance status as indicated in official documentation.
Selection Notes
Select this component for applications requiring high voltage blocking and moderate current handling. Consider the thermal resistance characteristics for heat sink design. Evaluate the switching speed requirements against the specified Eon and Eoff values. Ensure gate drive voltages remain within the ±20 V limit.
Part Context
This device belongs to Infineon's Power Semiconductors portfolio, specifically designed as a fast IGBT using Non-Punch Through (NPT) technology. It is engineered for robust performance in industrial power electronics, offering improved efficiency over prior generation devices through reduced switching losses.
Replacement Considerations
Consult official Infineon documentation for direct substitutes. Cross-reference electrical ratings such as VCEO, IC, and package dimensions when evaluating alternatives from other manufacturers.
