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Product Detailed Parameters
- Description：IGBT 400V D2PAK
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SGB15N40CLT4 is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing PowerMESH technology. It features a 400V collector-emitter voltage and a continuous collector current of 15A at 25°C. The device includes an integrated gate resistor and ESD protection for the gate-emitter junction. Key electrical parameters include a maximum saturation voltage of 1.8V at 15A and a short-circuit withstand capability of 3µs at 150°C with a 3mH inductive load. It operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Automotive-grade reliability compliant with AEC-Q101 standards
- Integrated gate resistor eliminates need for external components
- Built-in ESD protection on the gate-emitter terminal
- High short-circuit energy capability for robust ignition system operation
Applications
- Automotive ignition coil drivers
- Harsh environment automotive power switching
- General purpose high-voltage switching applications requiring automotive qualification
Procurement Notes
Verify the specific ordering suffix to ensure the correct tape-and-reel packaging quantity matches the production requirement. Confirm that the component meets the required AEC-Q101 qualification level for the target automotive application. Check the manufacturer's datasheet for the latest recommended soldering profile to prevent thermal damage during assembly processes.
Selection Notes
Select this IGBT when designing circuits that require 400V blocking capability with moderate current handling up to 15A. The integrated gate resistor simplifies PCB layout by reducing component count. Ensure the thermal management design supports the specified junction temperature limits. Consider the short-circuit rating if the application involves potential inductive load faults without immediate shutdown.
Part Context
This component belongs to onsemi’s SGB series of automotive IGBTs designed specifically for ignition systems. It leverages PowerMESH technology to achieve low on-state voltage while maintaining high ruggedness. The series is optimized for durability in harsh automotive environments, offering a balance of switching performance and fault tolerance compared to standard industrial IGBTs.
Replacement Considerations
Direct replacements must match the 400V Vceo, 15A Io, and TO-263 package. Verify equivalent short-circuit withstand time and saturation voltage characteristics. Ensure any substitute also holds AEC-Q101 certification if used in automotive contexts.
