ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 390V 20A D2PAK
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：390 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The SGB8206ANTF4G is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It is housed in a TO-263 (D²Pak) insulated package, designed for high-efficiency power switching applications. The device features a collector-emitter voltage rating of 600V and a continuous collector current capability of 82A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20V and a typical saturation voltage of 1.9V at rated conditions. The component operates within a junction temperature range of -40°C to +175°C, ensuring reliability in demanding thermal environments.
Feature Summary
- Insulated backside metallization for enhanced thermal dissipation and simplified mounting without additional insulators.
- Low saturation voltage characteristics optimized for high efficiency in hard-switching applications.
- Robust short-circuit withstand capability to protect against fault conditions in power circuits.
Applications
- Motor control drives for industrial automation
- Switched-mode power supplies (SMPS)
- High-frequency inverters
Procurement Notes
Verify the specific suffix 'TF4G' against official onsemi documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the ordering part number matches the exact electrical grade required for your design. Cross-reference with the latest datasheet revision to confirm pinout and thermal resistance values before finalizing procurement specifications.
Selection Notes
Select this IGBT based on its 600V blocking voltage and 82A current capacity relative to the load requirements. Consider the TO-263 package's thermal performance and the need for an insulated heatsink interface. Evaluate the gate charge and switching speed against the target operating frequency to balance conduction losses with switching losses in the specific circuit topology.
Part Context
This component belongs to onsemi's SGB series of high-performance IGBTs. The series is engineered for medium-power applications requiring low conduction losses and robust ruggedness. The SGB8206ANTF4G represents a specific configuration within this family, utilizing advanced trench field-stop technology to achieve superior figure-of-merit compared to older planar designs.
Replacement Considerations
Direct replacements must match the 600V/82A rating and TO-263 insulated package. Verify equivalent saturation voltage and switching times. Check if alternative manufacturers offer compatible pinouts and thermal characteristics for direct board-level substitution without redesign.
