SGD02N60BUMA1

$0.55

Description：IGBT NPT 600V 6A TO252-3
Series：-

SKU:4c73c4c9f5e2 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 6A TO252-3
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：6:00 AM
Current - Collector Pulsed (Icm)：12:00 AM
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 2A
Power - Max：30 W
Switching Energy：64µJ
Input Type：Standard
Gate Charge：14 nC
Td (on/off) @ 25°C：20ns/259ns
Test Condition：400V, 2A, 118Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：PG-TO252-3-11
Grade：-
Qualification：-

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SGD02N60BUMA1

Overview

The SGD02N60BUMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 600V and a maximum DC collector current of 6A. The device operates within a junction temperature range of -55°C to +150°C. It utilizes a TO-252-3 (DPAK) package with two leads and a tab, providing a thermal resistance suitable for power applications. The gate-to-emitter voltage maximum is specified at 20V.

Feature Summary

Single IGBT configuration utilizing NPT technology
High voltage blocking capability up to 600V
Robust thermal management via DPAK tab design

Applications

Motor control systems
Power supply inverters
Industrial switching applications

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required package variant. Check RoHS compliance status against current regulatory requirements. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet. Validate that the obsolete status does not impact long-term project viability.

Selection Notes

Select this component for circuits requiring moderate current handling with high voltage isolation. Consider the thermal performance characteristics when designing heat dissipation solutions. Evaluate the switching speed parameters against system timing requirements. Compare alternative single IGBT options if higher current ratings are necessary. Ensure gate drive voltages remain within the specified 20V maximum limit.

Part Context

This part belongs to Infineon's single IGBT product line, designed for general-purpose power switching. It represents a standard discrete solution for medium-power applications. The TO-252-3 package offers a balance between cost and thermal performance. It is distinct from integrated smart power switches or multi-chip modules.