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Product Detailed Parameters
- Description：IGBT 600V 40A TO-3PF
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 20A
- Power - Max：100 W
- Switching Energy：160µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：97 nC
- Td (on/off) @ 25°C：15ns/65ns
- Test Condition：300V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3PF
- Grade：-
- Qualification：-
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Overview
The SGF40N60UFTU is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, originally developed under Fairchild Semiconductor. It features a TO-3PF-3 package designed for high-speed switching applications. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.1 V at 20 A and 2.6 V at 40 A, with a maximum gate-emitter voltage of ±20 V. Total switching loss reaches 600 µJ at 25°C and 1200 µJ at 125°C.
Feature Summary
- High speed switching capability
- Low saturation voltage
- High input impedance
Applications
- AC & DC motor controls
- General purpose inverters
- Robotics
- Servo controls
Procurement Notes
Verify the manufacturer origin carefully, as the datasheet indicates Fairchild Semiconductor while the brand is listed as onsemi following corporate acquisition. Confirm the specific suffix 'TU' matches the tube packaging format shown in the official documentation. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process.
Selection Notes
Select this component when low conduction and switching losses are critical for system efficiency. The TO-3PF-3 package requires appropriate thermal management solutions to handle power dissipation up to 100 W at 25°C. Consider the 600 V rating for robust operation in standard industrial voltage environments.
Part Context
This part belongs to the UF series of IGBTs, which are engineered specifically for applications demanding high-speed switching performance. The series provides optimized trade-offs between conduction and switching losses, making it suitable for general-purpose inverter designs where rapid transitions are necessary.
Replacement Considerations
Check for direct equivalents within the same product family or cross-reference with other manufacturers offering similar TO-3PF packages. Verify that any substitute maintains comparable switching times and saturation voltages to ensure circuit compatibility.
