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Product Detailed Parameters
- Description：IGBT 600V 24A TO-3PN
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 15A
- Power - Max：160 W
- Switching Energy：320µJ (on), 356µJ (off)
- Input Type：Standard
- Gate Charge：42 nC
- Td (on/off) @ 25°C：17ns/44ns
- Test Condition：300V, 15A, 13Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The SGH15N60RUFDTU is a short circuit rated Insulated Gate Bipolar Transistor (IGBT) with an integrated Fast Recovery Diode (FRD). It features a TO-3P package and operates with a collector-emitter voltage of 600 V. The device supports a continuous collector current of 24 A at 25°C case temperature, with a saturation voltage of 2.2 V at 15 A. It withstands short circuits for 10 µs at 100°C. Thermal resistance from junction to case is 0.77 °C/W for the IGBT and 0.7 °C/W for the diode. Maximum power dissipation is 160 W at 25°C.
Feature Summary
- Short circuit ruggedness rated for 10 microseconds at 100°C case temperature
- Integrated CO-PAK configuration combining IGBT and FRD in a single package
- High-speed switching characteristics with low reverse recovery time
- Low saturation voltage for improved conduction efficiency
Applications
- AC and DC motor controls
- General purpose inverters
- Robotics systems
- Servo controls
Procurement Notes
Verify component authenticity through authorized distributors or manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices as this part originates from Fairchild Semiconductor legacy lines. Ensure thermal management solutions match the specified junction-to-case thermal resistance values during integration.
Selection Notes
Select based on required short circuit withstand capability and switching speed. Compare saturation voltage against system efficiency targets. Verify gate drive requirements align with the specified threshold voltage range. Ensure package mounting dimensions fit the mechanical design constraints of the target application.
Part Context
This component belongs to the RUFD series of IGBTs designed for applications requiring high reliability under fault conditions. Originally manufactured by Fairchild Semiconductor, it represents a specific generation of discrete power modules integrating both switching and freewheeling functions.
Replacement Considerations
Check datasheets for equivalent parts offering similar 600V ratings and TO-3P packaging. Verify that substitute components meet the 10us short circuit rating and comparable switching loss specifications.
