SGH23N60UFDTU

Overview

The SGH23N60UFDTU is a single N-channel Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) with an integrated Fast Recovery Diode (FRD). It features a TO-3P package and operates with a collector-emitter voltage of 600 V. The device supports a continuous collector current of 23 A at 25°C case temperature, reducing to 12 A at 100°C. Maximum power dissipation is rated at 100 W at 25°C. Key electrical parameters include a saturation voltage of 2.1 V at 12 A, a gate threshold voltage of 4.5 V typical, and a diode reverse recovery time of 42 ns typical.

Feature Summary

• High-speed switching capability designed for applications requiring rapid transitions.
• Low saturation voltage to minimize conduction losses during operation.
• Integrated FRD with fast reverse recovery characteristics.
• High input impedance simplifying drive circuit requirements.

Applications

• AC and DC motor controls
• General purpose inverters
• Robotics systems
• Servo controls

Procurement Notes

Verify component authenticity through authorized distributors or manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices as the product originates from Fairchild Semiconductor. Ensure thermal management solutions match the specified junction-to-case thermal resistance values for reliable long-term performance in target environments.

Selection Notes

Select this component when high-speed switching and low conduction loss are critical design requirements. Evaluate the thermal resistance specifications against the expected operating ambient temperatures. Consider the integrated diode characteristics if synchronous rectification or freewheeling functions are needed within the circuit topology.

Part Context

This part belongs to the UFD series of IGBTs originally developed by Fairchild Semiconductor. The series is characterized by ultra-fast switching speeds and low saturation voltages. The SGH23N60UFDTU specifically utilizes a TO-3P flange mount package suitable for high-power industrial applications.

Replacement Considerations

Direct substitutes may include SGH23N60UFD or SGH23N60UF depending on packaging requirements. Verify pinout compatibility and thermal characteristics before implementation.

FAQ

What is the typical reverse recovery time of the integrated diode?

The typical reverse recovery time (trr) is 42 ns at a case temperature of 25°C.

How does the continuous collector current rating change with temperature?

The continuous collector current is 23 A at a case temperature of 25°C and decreases to 12 A at a case temperature of 100°C.

What is the maximum power dissipation rating?

The maximum power dissipation is 100 W at a case temperature of 25°C.