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The SGH40N60UFDM1TU is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) from the UFD series, manufactured by Fairchild Semiconductor and distributed by onsemi. It features a CO-PAK package with an integrated Fast Recovery Diode (FRD). Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 40 A at 25°C case temperature, and a maximum pulsed collector current of 160 A. The device exhibits a typical saturation voltage of 2.1 V at 20 A and a diode reverse recovery time of 42 ns.
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status as specifications may change without notice. Ensure thermal management aligns with junction-to-case resistance limits. Check for lead-free compliance markings consistent with RoHS standards.
Evaluate thermal resistance values against system heat dissipation capabilities. Consider gate resistance impact on switching times and total switching loss. Verify operating junction temperature range compatibility with environmental conditions. Assess safe operating area constraints under varying collector currents and voltages.
This component belongs to Fairchild's UFD series of IGBTs designed for applications requiring high-speed switching. It represents a specific variant within the broader portfolio of ultra-fast IGBTs intended for inverter and motor control applications where low conduction and switching losses are critical performance factors.
Direct substitutes include SGH40N60UFD and SGH40N60UFDTU. These parts share identical electrical characteristics and pinout configurations within the TO-3PN package family. Cross-reference thermal and electrical ratings before implementation.