ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 40A TO-3P
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 20A
- Power - Max：160 W
- Switching Energy：160µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：97 nC
- Td (on/off) @ 25°C：15ns/65ns
- Test Condition：300V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
Download product information
Overview
The SGH40N60UFTU is a 600 V Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features an N-channel configuration with a built-in diode in a TO-220 package. The device supports a continuous collector current of 40 A and a pulsed collector current of 160 A. Key electrical parameters include a maximum collector-emitter voltage of 600 V, a saturation voltage of 2.1 V at 20 A, and a gate-emitter threshold voltage ranging from 3.0 V to 6.5 V. Switching characteristics include a turn-on time of 15 ns and a fall time of 65 ns.
Feature Summary
- Ultra-fast switching performance designed for high-speed applications
- Low saturation voltage for reduced conduction losses
- High input impedance for efficient drive requirements
Applications
- General purpose inverters
- Power factor correction (PFC) circuits
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or its successor entity ON Semiconductor. Confirm the specific suffix 'TU' corresponds to the standard tube packaging format. Ensure the component meets RoHS compliance standards required for the target assembly process before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring fast switching speeds combined with low conduction losses. The 600 V rating suits medium-voltage AC/DC conversion systems. Verify that the thermal management design accommodates the power dissipation limits specified in the datasheet for the chosen operating temperature range.
Part Context
This part belongs to the UF series of IGBTs, which are engineered for applications demanding high-speed switching capabilities. The series utilizes technology to minimize both conduction and switching energy losses, making it suitable for modern power electronics where efficiency and thermal performance are critical design constraints.
Replacement Considerations
Compatible substitutes within the same family include the SGH40N60UFDTU variant, which offers similar electrical characteristics but may differ in packaging or pinout configuration. Verify mechanical compatibility and electrical equivalence before implementing any cross-replacement in existing designs.
