SGL160N60UFDTU

Overview

The SGL160N60UFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 160 A at 25°C. The device is housed in a TO-264 package with through-hole mounting. Key electrical parameters include a maximum power dissipation of 250 W, a gate-emitter voltage range of ±20 V, and an operating temperature range from -55°C to +150°C.

Feature Summary

• High current handling capability suitable for demanding power applications
• Robust thermal performance with high power dissipation rating
• Designed for reliable operation across wide temperature ranges

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Welding equipment

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as this part may be subject to lifecycle changes. Ensure packaging integrity matches original specifications upon receipt.

Selection Notes

Select based on required current ratings and thermal management capabilities. Verify package compatibility with existing PCB layouts. Consider switching losses and saturation voltage for efficiency optimization. Ensure gate drive voltage aligns with the specified ±20 V limit.

Part Context

This component belongs to the SGH/FGA/SGL series of high-power IGBTs from onsemi. These devices are engineered for medium to high-power conversion applications. The TO-264 package provides enhanced thermal conductivity compared to standard TO-220 variants, supporting higher current densities.

Replacement Considerations

Direct substitutes include FGH40N60UFDTU and SGH30N60RUFDTU, though current ratings differ significantly. Verify pinout and thermal characteristics before substitution. Consult official cross-reference guides for approved alternatives.