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The Infineon Technologies SGP20N60HSXKSA1 is a high-speed NPT-technology IGBT in the PG-TO-220-3-1 package. It features a collector-emitter voltage of 600V, a DC collector current of 36A at 25°C and 20A at 100°C, and a pulsed current capability of 80A. The device has a maximum junction temperature of 150°C, a turn-off energy of 240µJ, and supports a short-circuit withstand time of 10µs.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component meets JEDEC qualification requirements for the intended target application before procurement.
Select this component for designs requiring high-speed switching capabilities above 30 kHz. Ensure thermal management accommodates the specified junction temperature limit of 150°C and consider the short-circuit withstand time for protection circuit design.
This part belongs to Infineon's high-speed IGBT family utilizing NPT technology. It is specifically engineered for 600V applications where parallel switching and stable behavior across temperatures are critical requirements.
The SGW20N60HS is a pin-compatible alternative within the same series, differing only in the PG-TO-247-3 package configuration.
The device supports a short-circuit withstand time of up to 10 µs.
Yes, the NPT technology ensures very tight parameter distribution, making it suitable for parallel switching.
The maximum junction temperature (Tj) is 150°C.