SGP30N60HSXKSA1

SGP30N60HSXKSA1

  • Description:IGBT NPT 600V 41A TO220-3
  • Series:-

SKU:b9cab8984a7f Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 41A TO220-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):41 A
  • Current - Collector Pulsed (Icm):112 A
  • Vce(on) (Max) @ Vge, Ic:3.15V @ 15V, 30A
  • Power - Max:250 W
  • Switching Energy:1.15mJ
  • Input Type:Standard
  • Gate Charge:141 nC
  • Td (on/off) @ 25°C:20ns/250ns
  • Test Condition:400V, 30A, 11Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3-1
  • Grade:-
  • Qualification:-

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SGP30N60HSXKSA1

Overview

The Infineon SGP30N60HSXKSA1 is a high-speed NPT-technology IGBT rated for 600V collector-emitter voltage. It supports a DC collector current of 41A at 25°C and withstands short-circuit currents up to 220A for 10µs. The device features a turn-off energy (Eoff) of 480µJ, a maximum junction temperature of 150°C, and a thermal resistance from junction to case of 0.5 K/W.

Feature Summary

  • High speed switching capability designed for operation above 30 kHz
  • NPT technology enables parallel switching with tight parameter distribution
  • Short circuit withstand time of 10 µs for enhanced ruggedness

Applications

  • High frequency power conversion circuits
  • Parallel switching configurations in power modules
  • Industrial motor drives requiring fast switching

Procurement Notes

Verify the specific package variant against the datasheet table; the 'SGP' prefix indicates PG-TO-220-3-1 packaging, while 'SGW' denotes PG-TO-247-3. Confirm RoHS compliance and Pb-free lead plating status directly with the manufacturer or authorized distributor before procurement.

Selection Notes

Select this component when designing circuits operating above 30 kHz that require moderate Eoff increase with temperature. Ensure the application stays within the 150°C maximum junction temperature limit and utilizes appropriate gate resistance to manage switching speeds and losses effectively.

Part Context

This part belongs to the SGx30N60HS series of high-speed IGBTs utilizing NPT technology. It is functionally related to the SGW30N60HS, sharing identical electrical characteristics but differing in physical package configuration. The series is optimized for applications demanding high ruggedness and stable behavior across varying temperatures.

Replacement Considerations

The SGW30N60HS serves as a direct functional equivalent with identical electrical ratings, differing only in the PG-TO-247-3 package instead of PG-TO-220-3-1.

SGP30N60HSXKSA1SGP30N60HSXKSA1

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