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The Infineon SGP30N60HSXKSA1 is a high-speed NPT-technology IGBT rated for 600V collector-emitter voltage. It supports a DC collector current of 41A at 25°C and withstands short-circuit currents up to 220A for 10µs. The device features a turn-off energy (Eoff) of 480µJ, a maximum junction temperature of 150°C, and a thermal resistance from junction to case of 0.5 K/W.
Verify the specific package variant against the datasheet table; the 'SGP' prefix indicates PG-TO-220-3-1 packaging, while 'SGW' denotes PG-TO-247-3. Confirm RoHS compliance and Pb-free lead plating status directly with the manufacturer or authorized distributor before procurement.
Select this component when designing circuits operating above 30 kHz that require moderate Eoff increase with temperature. Ensure the application stays within the 150°C maximum junction temperature limit and utilizes appropriate gate resistance to manage switching speeds and losses effectively.
This part belongs to the SGx30N60HS series of high-speed IGBTs utilizing NPT technology. It is functionally related to the SGW30N60HS, sharing identical electrical characteristics but differing in physical package configuration. The series is optimized for applications demanding high ruggedness and stable behavior across varying temperatures.
The SGW30N60HS serves as a direct functional equivalent with identical electrical ratings, differing only in the PG-TO-247-3 package instead of PG-TO-220-3-1.