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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 20A
- Power - Max：160 W
- Switching Energy：160µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：97 nC
- Td (on/off) @ 25°C：15ns/65ns
- Test Condition：300V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The Fairchild Semiconductor SGP40N60UFTU is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. It features a single N-channel configuration with a built-in diode, housed in a TO-220AB package. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A. The device exhibits low saturation voltage, specified as 2.1 V at a collector current of 20 A, ensuring efficient conduction. It supports a maximum junction temperature of 175 °C and operates within a temperature range of -55 °C to +175 °C.
Feature Summary
- High speed switching capability
- Low saturation voltage
- High input impedance
Applications
- AC motor controls
- DC motor controls
- General purpose inverters
- Robotics
- Servo controls
Procurement Notes
Verify the manufacturer origin, as Fairchild Semiconductor's discrete semiconductor division was acquired by ON Semiconductor. Confirm that the specific part number corresponds to the original Fairchild datasheet specifications rather than the ON Semiconductor equivalent. Ensure the component matches the required TO-220AB package and lead-free status if RoHS compliance is mandatory for the assembly process.
Selection Notes
Select this component when designing circuits requiring fast switching speeds combined with low conduction losses. The 600 V rating suits medium-voltage power conversion systems. Consider the thermal management requirements associated with the TO-220AB package and the 175 °C maximum junction temperature limit. Verify gate drive compatibility given the standard IGBT input characteristics.
Part Context
This component belongs to the Fairchild UF series of Insulated Gate Bipolar Transistors. The series is engineered to provide low conduction and switching losses, making it suitable for applications where high-speed switching is a critical requirement. It represents a specialized class of power semiconductors distinct from standard IGBTs or MOSFETs.
Replacement Considerations
Check for equivalents such as the FGH40N60UFDTU or SGF23N60UFTU from related manufacturers. Verify pinout compatibility and ensure that the replacement device meets or exceeds the 600 V voltage rating and 40 A current capacity. Confirm that the thermal resistance and package dimensions are compatible with the existing PCB layout.
