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The SGP5N60RUFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. It features a TO-220AB package with three pins and through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 5 A at 25°C. Key electrical parameters include a saturation voltage of 2.1 V at 3 A, a gate-emitter threshold voltage of up to 7.5 V, and a fall time of 280 ns. It operates within a temperature range of -55°C to +150°C.
Verify the manufacturer status as Fairchild Semiconductor assets were acquired by onsemi. Confirm RoHS compliance details via official datasheets, as some legacy listings indicate non-compliance. Check for obsolescence notices or PCN documents regarding this specific TO-220AB variant before procurement planning.
Select this component for designs requiring short-circuit protection capabilities alongside high-speed switching. Ensure the thermal management system can handle the power dissipation in a TO-220AB package. Compare the 5 A current rating against load requirements and verify that the 600 V breakdown voltage exceeds the peak circuit voltages.
This IGBT belongs to the RUF series, which emphasizes short-circuit ruggedness. It shares the family's focus on low saturation voltage and high-speed switching. The TO-220AB package distinguishes it from surface-mount variants like the D2PAK used in the SGW series or the larger TO-3P packages found in higher-current models.
The SGH30N60RUFTU offers similar 600 V ratings but in a TO-3P package with significantly higher current capacity. For direct pin-compatible replacements, verify equivalent short-circuit ratings and saturation voltages in other manufacturers' TO-220 IGBTs.