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The SGS10N60RUFTU is a Short Circuit Rated Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's RUFD series, housed in a CO-PAK package. It features an integrated Fast Recovery Diode (FRD) with a typical reverse recovery time of 42 ns. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 10 A at Tc=25°C. Key electrical parameters include a saturation voltage of 2.2 V at 10 A, a maximum fall time of 280 ns, and a gate-emitter threshold voltage maximum of 7.5 V. It withstands short circuit conditions for 10 µs at Tc=100°C and VGE=15V, operating up to a junction temperature of 150°C.
Verify the specific suffix 'FTU' against official Fairchild documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component matches the RUFD series datasheet requirements for thermal management and gate drive voltages during integration.
Select this IGBT when short circuit protection is required without external clamping circuits. The integrated FRD simplifies design for inductive loads. Compare VCE(sat) and switching speeds against standard IGBTs if high-frequency operation is critical.
This component belongs to Fairchild's RUF/RFU series of short-circuit rated IGBTs. It shares functional similarities with models like SGS10N60RUF but includes the additional FRD feature indicated by the 'D' in the base part number, distinguishing it from standard IGBTs in the same voltage class.
Direct substitutes within the same family include SGS10N60RUF (without FRD) or SGS10N60RUFD. Verify pinout compatibility and thermal resistance differences before replacing with other manufacturers' 600V 10A IGBTs with integrated diodes.