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The SGS5N60RUFDTU is a short circuit rated Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's RUFD series. It features an N-channel configuration housed in a CO-PAK package with three pins. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 5 A. The device exhibits a low saturation voltage of 2.2 V at 10 A and a typical reverse recovery time of 42 ns for the integrated fast recovery diode. It operates within a junction temperature range up to 150 °C.
Verify component authenticity through authorized Fairchild or onsemi distributors, as the company underwent acquisition. Confirm the specific suffix DTU indicates tube packaging if required by assembly processes. Check RoHS compliance status against the specific manufacturing date code, as older RUFD series variants may differ in environmental certification.
Select this IGBT when short circuit protection is critical for system reliability. The integrated fast recovery diode simplifies design for inductive loads. Ensure the thermal management solution supports the CO-PAK package's heat dissipation capabilities. Verify that the 600V rating exceeds the peak voltage stresses in the target inverter or motor drive application.
This component belongs to the Fairchild RUFD series of short circuit rated IGBTs. Similar parts in this family include the SGS10N60RUFD and SGW10N60RUF, which offer higher current ratings but share the same ruggedness and switching characteristics. The series is designed to replace standard IGBTs in applications requiring fault tolerance.
Direct substitutes include SGS10N60RUFD for higher current capacity. Cross-reference with onsemi datasheets due to the Fairchild acquisition. Ensure pinout compatibility between CO-PAK variants before substitution.