SGW30N60HSFKSA1

Description：IGBT NPT 600V 41A TO247-3
Series：-

SKU:dd3ee1ed9c72 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 41A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：41 A
Current - Collector Pulsed (Icm)：112 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 30A
Power - Max：250 W
Switching Energy：1.15mJ
Input Type：Standard
Gate Charge：141 nC
Td (on/off) @ 25°C：20ns/250ns
Test Condition：400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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SGW30N60HSFKSA1

Overview

The SGW30N60HSFKSA1 is a high-speed N-channel Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It utilizes Non-Punch Through (NPT) technology and is housed in a PG-TO-247-3 package. The device features a collector-emitter voltage of 600 V, a DC collector current of 41 A at 25°C, and a short-circuit withstand time of 10 µs. Designed for operation above 30 kHz, it offers reduced turn-off energy compared to previous generations.

Feature Summary

High-speed switching capability optimized for frequencies exceeding 30 kHz
Robust short-circuit protection with a 10 µs withstand time
Parallel switching capability enabled by tight parameter distribution
Temperature-stable behavior with moderate turn-off energy increase

Applications

High-frequency power conversion circuits
Industrial motor drives
Uninterruptible power supplies (UPS)
Switch-mode power supplies (SMPS)

Procurement Notes

Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO-247-3 package outline dimensions. Confirm that the part number corresponds to the SGW30N60HS variant rather than the SGP30N60HS TO-220 version.

Selection Notes

Select this component for applications requiring high switching speeds and robust short-circuit tolerance. The NPT technology ensures stable performance across temperature ranges. Consider the thermal resistance values when designing heat sinks. Verify gate drive requirements align with the specified threshold voltages and gate charge characteristics.

Part Context

This IGBT belongs to the SGx30N60HS series from Infineon Technologies. It represents a generation focused on high-speed performance using NPT technology. The series includes variants like the SGP30N60HS in different packages. It is designed to replace older technologies while offering improved switching characteristics and ruggedness for demanding power electronics applications.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Evaluate alternatives within the Infineon TRENCHSTOP™ or similar high-speed NPT families based on matching voltage, current, and package specifications.