SGW50N60HSFKSA1

SGW50N60HSFKSA1

$2.68
  • Description:IGBT NPT 600V 100A TO247-3
  • Series:-

SKU:ec3968e9f402 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 600V 100A TO247-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:3.15V @ 15V, 50A
  • Power - Max:416 W
  • Switching Energy:1.96mJ
  • Input Type:Standard
  • Gate Charge:179 nC
  • Td (on/off) @ 25°C:47ns/310ns
  • Test Condition:400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

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SGW50N60HSFKSA1

Part Context

The SGW50N60HSFKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It belongs to the SGW30N60 series and utilizes High Speed Non-Punch Through (NPT) technology. The device is designed for high-speed switching applications within power electronics systems.

SGW50N60HSFKSA1SGW50N60HSFKSA1
$2.68
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