SH63N65DM6AG

$23.32

Description：MOSFET 2N-CH 650V 53A 9ACEPACK
Series：ECOPACK®

SKU:1e324bc25842 Category: FET, MOSFET Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 650V 53A 9ACEPACK
Series：ECOPACK®
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：650V
Current - Continuous Drain (Id) @ 25°C：53A (Tc)
Rds On (Max) @ Id, Vgs：64mOhm @ 23A, 10V
Vgs(th) (Max) @ Id：4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3344pF @ 100V
Power - Max：424W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：9-PowerSMD
Supplier Device Package：9-ACEPACK SMIT
Grade：-
Qualification：-

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SH63N65DM6AG

Overview

The SH63N65DM6AG is an automotive-grade N-channel half-bridge Power MOSFET from STMicroelectronics, utilizing MDmesh DM6 technology. It features a 650 V drain-source breakdown voltage and a maximum on-resistance of 64 mΩ at 23 A. The device supports a continuous drain current of 53 A at 25 °C case temperature and dissipates up to 424 W. Packaged in the ACEPACK SMIT surface-mount format with a DBC substrate, it offers low thermal resistance (0.29 °C/W junction-to-case) and high dv/dt ruggedness of 100 V/ns. The module integrates two switches for flexible topologies.

Feature Summary

AQG 324 qualified for automotive reliability standards
Half-bridge power module topology combining two MOSFETs
Fast recovery body diode with very low switching energies
Low package inductance and dice on direct bond copper substrate

Applications

Switching applications
Phase legs configurations
Boost converter circuits

Procurement Notes

Verify component authenticity by cross-referencing the datasheet revision DS14369 Rev 1 against official STMicroelectronics channels. Confirm that the marking H63N65DM6 matches the ordered part number. Ensure storage conditions adhere to the specified moisture sensitivity level and temperature ranges to maintain device integrity prior to assembly.

Selection Notes

Select this component for designs requiring a compact, rugged half-bridge solution with high thermal efficiency. The ACEPACK SMIT package facilitates easy surface mount assembly while providing an isolated top-side thermal pad. Consider the 650 V rating and 53 A current capability when sizing for specific load requirements and thermal management constraints.

Part Context

This device belongs to the MDmesh DM6 series of super-junction power MOSFETs optimized for full-bridge phase-shifted ZVS topologies. It represents an evolution in ST's high-voltage portfolio, offering improved RDS(on) per area and faster recovery characteristics compared to previous generations. The series targets demanding high-efficiency bridge topologies and resonant converters.