SH68N65DM6AG

Overview

The SH68N65DM6AG is an automotive-grade N-channel half-bridge power MOSFET module from STMicroelectronics, utilizing MDmesh DM6 technology. It features a 650 V drain-source breakdown voltage and a maximum on-resistance of 41 mΩ at 23 A. The device supports a continuous drain current of 64 A at 25 °C case temperature and dissipates up to 379 W. Packaged in the compact ACEPACK SMIT surface-mount format with a DBC substrate, it offers low thermal resistance (0.33 °C/W) and high dv/dt ruggedness. Total gate charge is 116 nC, and it includes a fast-recovery body diode.

Feature Summary

• AQG 324 qualified for automotive reliability
• Half-bridge topology combining two MOSFETs
• Low package inductance and switching energies
• Isolated top-side thermal pad with 3.4 kVrms isolation rating

Applications

• High-efficiency bridge topologies
• ZVS phase-shift converters
• SMPS and data center power conversion

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or official sales channels. Confirm the specific ordering code matches the required package variant and check for recent PCN updates regarding assembly sites or material changes. Ensure storage conditions comply with the specified moisture sensitivity level to prevent damage before reflow soldering.

Selection Notes

Select this component when designing automotive-grade circuits requiring a pre-configured half-bridge in a surface-mount form factor. The ACEPACK SMIT package is suitable for applications demanding low thermal resistance and high design flexibility. Consider the 650 V blocking voltage and 64 A current capability against the specific load requirements and thermal management constraints of the target system.

Part Context

This part belongs to the MDmesh DM6 series, which integrates fast-recovery diodes with improved RDS(on) per area compared to previous generations. It shares the ACEPACK SMIT packaging family with other automotive-grade modules like the SH63N65DM6AG, offering similar mechanical footprints but differing electrical characteristics such as current ratings and on-resistance values.

Replacement Considerations

Direct substitutes within the same package and electrical class include the SH63N65DM6AG. Verify pinout compatibility and thermal performance if replacing with single-switch variants or different current-rated models from the MDmesh DM6 family.

FAQ

What is the isolation rating of the ACEPACK SMIT package?

The device provides an isolation withstand voltage of 3.4 kVrms applied between each pin and the heat sink plate.

How does the device handle unclamped inductive loads?

It supports repetitive or non-repetitive avalanche currents up to 9 A, with a single pulse avalanche energy rating of 1.9 J starting from 25 °C junction temperature.

What is the typical reverse recovery time of the body diode?

At TJ = 25 °C, ISD = 72 A, and di/dt = 100 A/μs, the typical reverse recovery time is 166 ns.