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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 8.5A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：16.8nC @ 5V, 17.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 10V, 830pF @ 10V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8K10SGZETB is a 30V N-channel/N-channel plus Schottky Barrier Diode (SBD) power MOSFET manufactured by Rohm Semiconductor. It features an SOP-8 surface mount package with eight terminals. Key electrical parameters include a drain-source voltage of 30V and a continuous drain current of 8.5A. The typical on-resistance is 0.019Ω at 4V gate drive, 0.0178Ω at 4.5V, and 0.014Ω at 10V. Total gate charge is typically 8.4nC. Power dissipation is rated at 2.0W. The device operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Integrated dual N-channel MOSFET configuration combined with a Schottky Barrier Diode for synchronous rectification applications.
- Low on-resistance characteristics optimized for efficient switching performance in DC/DC converters.
- Compact SOP-8 surface mount package design suitable for space-constrained PCB layouts.
Applications
- DC/DC converter circuits requiring synchronous rectification
- Motor driver stages utilizing integrated freewheeling diodes
- General purpose switching applications in consumer electronics
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices as the product may be discontinued. Ensure packaging specifications match tape-and-reel requirements for automated assembly processes.
Selection Notes
Select this component when a 30V rating and integrated SBD functionality are required in an SOP-8 package. Compare on-resistance values at specific gate drive voltages against circuit requirements. Evaluate thermal management needs based on the 2.0W power dissipation rating and ambient operating conditions.
Part Context
This part belongs to Rohm's power MOSFET portfolio designed for general-purpose switching. It integrates a Schottky diode to simplify circuit designs by eliminating external freewheeling diodes. The SOP-8 package provides a balance between current handling capability and board space efficiency.
Replacement Considerations
The SH8KA2TB1 is listed as a recommended replacement with the same SOP-8 package. Verify pin compatibility and electrical parameter differences, particularly regarding on-resistance and gate charge, before substituting in existing designs.
FAQ
What is the internal configuration of the SH8K10SGZETB?
It contains two N-channel MOSFETs and one integrated Schottky Barrier Diode (SBD).
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (Vdss) is 30V.
Is this component suitable for automotive applications?
No, standard grade products like this are generally not recommended for automotive equipment unless specifically certified under AEC-Q standards.
