SH8K1TB1

Overview

The SH8K1TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, designed for general switching applications. It features a V_DSS of 30V and a continuous drain current (I_D) of 10A. The device exhibits low on-resistance, with R_DS(on) typically at 0.0147Ω when V_GS is 4.5V, and 0.0112Ω at 10V. Total gate charge (Q_g) is 2.7nC, supporting efficient drive requirements. Power dissipation (P_D) reaches 2W. The component utilizes the HSML3030L10 surface-mount package, operates within a storage temperature range of -55°C to 150°C, and complies with RoHS standards.

Feature Summary

• Dual N-channel configuration optimized for compact switching circuits
• Low on-resistance characteristics enhance energy efficiency
• Compact surface-mount packaging facilitates automated assembly

Applications

• DC/DC converters
• General-purpose switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging quantities and reel specifications. Ensure that the procurement channel provides valid traceability data. Confirm compliance with environmental directives such as RoHS before finalizing orders. Check for any recent lifecycle status updates regarding new design recommendations.

Selection Notes

Select this component for applications requiring a 30V rating and high current handling in a small footprint. Evaluate thermal management capabilities given the 2W power dissipation limit. Compare gate charge values against available driver outputs to ensure adequate switching speed without excessive drive current demands.

Part Context

This part belongs to Rohm's series of dual N-channel MOSFETs, which are engineered for space-constrained designs. The HSML3030L10 package allows for high-density PCB layouts. These devices are standard-grade components intended for general industrial and consumer electronics rather than automotive or safety-critical systems.

Replacement Considerations

Direct pin-compatible replacements must match the 30V V_DSS, 10A I_D, and HSML3030L10 package dimensions. Verify that alternative parts offer comparable R_DS(on) and Q_g values to maintain circuit performance and thermal profiles.