SH8K25GZ0TB

Overview

The SH8K25GZ0TB is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, housed in an SOP8 surface-mount package. It features a drain-source voltage (VDSS) of 40V and a continuous drain current (ID) of ±5.2A at 25°C. The device exhibits a maximum static on-state resistance (RDS(on)) of 85mΩ at VGS=10V and ID=5.2A, or 112mΩ at VGS=4.5V and ID=4.0A. Total gate charge (Qg) is typically 1.7nC at VGS=5V. Power dissipation reaches 3W under specific mounting conditions, with a junction temperature range of -55°C to +150°C.

Feature Summary

• Low on-resistance for efficient switching performance
• Small surface mount SOP8 package design
• Lead-free plating compliant with RoHS directives
• Halogen-free construction

Applications

• General electronic equipment switching circuits
• Audio-visual equipment power management
• Office automation device drivers
• Home appliance control systems

Procurement Notes

Verify the ordering suffix GZ0TB against the latest Rohm Semiconductor datasheet to confirm packaging specifications and marking details. Ensure that the procurement channel provides authentic components with intact moisture barrier bags, as storage time limits may affect solderability. Cross-reference the part number with official distributor catalogs to validate supply status before finalizing orders.

Selection Notes

Select this component for applications requiring a compact dual N-channel configuration within a 40V voltage rating. Evaluate the thermal resistance values relative to the intended PCB copper area, as power dissipation varies significantly between ceramic and copper board mounts. Confirm that the drive voltage meets the threshold requirements for optimal RDS(on) performance during operation.

Part Context

This device belongs to the SH8K series of dual N-channel power MOSFETs from Rohm Semiconductor. It shares the SOP8 footprint with other variants in the family but differs in electrical ratings such as breakdown voltage and current capacity. The SH8K25 is specifically engineered for low-power switching tasks where space constraints and efficiency are primary design considerations.

Replacement Considerations

Consult the official Rohm Semiconductor documentation for direct replacement part numbers. Verify that any substitute component matches the SOP8 package dimensions, pinout configuration, and electrical parameters including VDSS, ID, and RDS(on). Ensure compatibility with existing thermal management solutions and drive circuitry.

FAQ

What is the maximum pulsed drain current for the SH8K25?

The maximum pulsed drain current (IDP) is ±8A, limited by a pulse width of 10μs and a duty cycle of 1%.

How does the power dissipation change based on the mounting board?

Power dissipation is rated at 3W when mounted on a 30×30×0.8mm ceramic board, 2W on a 40×40×0.8mm copper board, and 1.4W under other unspecified standard conditions.

Is the SH8K25 suitable for automotive applications?

No, ROHM products are designed for ordinary electronic equipment. Use in car equipment or devices requiring extremely high reliability is not recommended without prior consultation and written agreement.