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The SH8K25GZ0TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, designed for supporting existing customers. It features an SOP-8 surface-mount package with eight terminals and operates within a drain-source voltage (V_DSS) of 40V. The device delivers a continuous drain current (I_D) of 5.2A. Typical on-resistance (R_DS(on)) values are 0.08Ω at 4.5V drive and 0.06Ω at 10V drive. The component supports RoHS compliance and utilizes tape packaging with a unit quantity of 2500.
Verify the supply status before procurement as this component is designated as not recommended for new designs. Confirm that the ordering suffix GZ0TB1 matches the required SOP-8 package and tape-and-reel specifications. Ensure compatibility with existing board layouts and thermal management requirements for the 40V/5.2A rating.
Select this part only for legacy system maintenance or upgrades where the original design constraints are fixed. Evaluate if the 40V rating and 5.2A current capacity meet the specific load requirements. Consider the SOP-8 footprint compatibility during replacement planning to avoid PCB redesign.
This component belongs to the SH8K series of dual N-channel MOSFETs from Rohm Semiconductor. It shares similar package dimensions and pinout configurations with other parts in the family, such as the SH8KB6, which offers higher current ratings but may differ in electrical characteristics.
The SH8KB6 is a confirmed substitute with the same SOP-8 package and pinout. Verify that the increased current rating and lower on-resistance of the SH8KB6 do not introduce unintended circuit behavior changes.